Marian W. Pospieszalski and Edward J. Wollack
August 4, 1998
Keywords: field-effect transistor, high-electron-mobility transistor, heterostructure field-effect transistor, noise, noise modeling, low-noise amplifiers, radiometers, radio astronomy
Recent developments in ultra-low-noise, cryogenically-cooled, heterostructure field-effect transistor (HFET's) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 18 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed.
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