MMA Memo #222

CHARACTERISTICS OF BROADBAND INP HFET MILLIMETER-WAVE AMPLIFIERS AND THEIR APPLICATIONS IN RADIO ASTRONOMY RECEIVERS

Marian W. Pospieszalski and Edward J. Wollack

August 4, 1998

Keywords: field-effect transistor, high-electron-mobility transistor, heterostructure field-effect transistor, noise, noise modeling, low-noise amplifiers, radiometers, radio astronomy

Recent developments in ultra-low-noise, cryogenically-cooled, heterostructure field-effect transistor (HFET's) receivers for frequencies up to 110 GHz are reviewed. Design and examples of the realization of InP HFET receivers in the frequency range 18 to 110 GHz are described. Applications to ultra-low-noise radio astronomy receivers, as well as broadband continuum radiometers, are discussed.

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Last modified: 09 December, 1999